臺式三維原子層沉積系統(tǒng)ALD簡介:
原子層沉積(Atomic layer deposition, ALD)是通過將氣相前驅(qū)體脈沖交替的通入反應(yīng)器,化學吸附在沉積襯底上并反應(yīng)形成沉積膜的種方法,是種可以將物質(zhì)以單原子膜形式逐層的鍍在襯底表面的方法。因此,它是種真正的“納米"技術(shù),以精確控制方式實現(xiàn)納米的超薄薄膜沉積。由于ALD用的是飽和化學吸附的性,因此可以確保對大面積、多空、管狀、粉末或其他復雜形狀基體的高保形的均勻沉積。 | |
美國ARRADIANCE公司的GEMStar XT系列臺式 ALD系統(tǒng),在小巧的機身(78 x56 x28 cm)中集成了原子層沉積所需的所有功能,可zui多容納9片8英寸基片同時沉積。GEMStar XT全系配備熱壁,結(jié)合前驅(qū)體瓶加熱,管路加熱,橫向噴頭等設(shè)計, 使溫度均勻性高達99.9%,氣流對溫度影響減少到0.03%以下。高溫度穩(wěn)定度的設(shè)計不僅實現(xiàn)在 8英寸基體上膜厚的不均勻性小于1%,而且更適合對超高長徑比的孔徑結(jié)構(gòu)等3D結(jié)構(gòu)實現(xiàn)均勻薄膜覆蓋,可實現(xiàn)對高達1500:1長徑比微納深孔內(nèi)部的均勻沉積。 |
GEMStar XT 產(chǎn)品點: l 300℃ 鋁合金熱壁,對流式溫度控制 l 175℃溫控150ml前驅(qū)體瓶,200℃溫控輸運支管 l 可容納多片4,6,8英寸樣品同時沉積 l 可容納1.25英寸/32mm厚度的基體 l 標準CF-40接口 l 可安裝原位測量或粉末沉積模塊等選件 l 等離子體輔助ALD插件 l 多種配件可供選擇 | GEMStar XT 產(chǎn)品型號: GEMStar -4 XT: l zui大4英寸/100 mm基片沉積 l 單路前驅(qū)體輸運支管, 4路前驅(qū)體瓶接口 l 不可升為等離子體增強ALD GEMStar -6/8 XT: l zui大6英寸(150mm)/8英寸(200mm)基片沉積 l 雙路前驅(qū)體輸運支管, 8路前驅(qū)體瓶和CF-40接口 l 可升為等離子體增強ALD |
三維原子層沉積系統(tǒng)ALD點 | GEMStar -8 XT-P: l zui大8英寸/200mm基片沉積 l 雙路前驅(qū)體輸運支管, 8路前驅(qū)體瓶和CF-40接口 l 裝備高性能ICP等離子發(fā)生器 13.56 MHz 的等離子源非常緊湊,只需風冷,zui高運行功率達300W。 l 標配3組氣流質(zhì)量控制計(MFC)控制的等離子氣源線,和條MFC控制的運載氣體線,使難以沉積的氧化物、氮化物、金屬也可以實現(xiàn)均勻沉積。 |
豐富配件: | ||
多樣品托盤: l 多樣品夾具,樣品尺寸(8", 6", 4")向下兼容。 l 多基片夾具,zui多同時容納9片基片。{C}{C} | 溫控熱托盤: l 可加熱樣品托盤,zui高溫度500℃,可實現(xiàn)熱盤-熱壁復合加熱方式。 {C}{C} | |
尾氣處理系統(tǒng): {C}{C}
| 臭氧發(fā)生器: {C}{C} | |
粉末旋轉(zhuǎn)沉積罐模塊: 配合熱壁加熱方式,進步實現(xiàn)對微納粉末樣品全保型薄膜均勻沉積包覆。 {C}{C} {C}{C} | ||
手套箱接口: 可從側(cè)面或背面*接入手套箱,與從底部接入手套箱不同,不占用手套箱空間。由于主機在手套箱側(cè)面,反應(yīng)過程中不對手套箱有加熱效應(yīng),不影響手套箱內(nèi)溫度。
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{C}{C} | {C}{C} | |
{C}{C}{C}{C}{C}{C}
國內(nèi)外用戶
已發(fā)表文獻
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